Guide Epitaxial Microstructures (Semiconductors and Semimetals)

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  1. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
  2. Top Authors
  3. 98 results in SearchWorks catalog

Qadri, S. Dean, B. Nishitani, K. Bicknell, R. Faurie, J. Otsuka, N. Ponce, F. Feldman, R. Srinivasa, R. Herman, M. Growth , 66 , Zhang, X.

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

Harwit, A. Ashenford, D. Crystal Growth , 95 , Luminescence , 34 , Petrou, A. Warnock, J. Venugopalan, S. Suh, E. Williams, G. Holonyak, N. Isaacs, E. Dreifus, D. M, Harris, K. Benson, J. Crystal Growth , 86 , Bicknell-Tassius, R.

Crystal Growth , , Farrell, H. Harper, Jr. C et al. Ohnishi, M.

Top Authors

Pearsall, ed. Monfroy, G. Miles, R. Menendez, J. B34 , Glass, A. Tersoff, J. Mackey, K. Noreika, A. Takei, W. Teehnol , A1 , Feng, Z. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes.

Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors.

Edited by T. Standard Multicrystalline Casting; 1. Float Zone; 2. Fundamental Parameters for Silicon Crystallization. Numerical Simulation; 3.

Crystallization Technologies; 3. Pulling from the Melt: The Cz Technique; 3. Standard Cz Growth; 3. Process Sequence; 3. The Main Cost Drivers; 3. Actual Trends and Recent Developments; 3.

  • ISBN 13: 9780127521404?
  • Epitaxial Microstructures, Volume 40?
  • Bean, John C. (John Condon) 1950-.
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Magnetic Cz; 3. Active Cooling; 3.

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  8. Multipulling, Feeding, and Continuous Growth; 3. Directional Solidification: Growth of Multicrystalline Silicon; 3. Standard Growth Process; 3. The Hardware; 3. Growth Process; 3. Crucible Coating. Actual Trends3. Scaling; 3. Mono-Like Growth; 3. High-Performance Multi; 3. FZ Growth; 3. State of the Art; 3.

    Diameter Limitations; 3. Feedstock; 4. Multiwire Sawing Technology; 2.

    Applied Explains: Epitaxial Deposition

    Slurry-Based Sawing; 2. Fixed Abrasive Sawing; 2. Experimental Sawing Results; 2. Force in Ingot Feed Direction; 2. Friction Forces; 2. Dependence on Slurry Properties; 2. Wire Tension. Saw Marks; 2. Determination of Wafer Properties; 2. Surface Properties; 2.

    Thickness, TTV, and Roughness; 2. Subsurface Damage; 2. Single Indentation Tests; 2. Loose Abrasive Sawing; 2.

    98 results in SearchWorks catalog

    Fracture Behavior; 2. Electronic Grade Silicon; 3. Basic Sawing Mechanisms; 3.